By Rene Hubner
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Extra info for Advanced Ta-Based Diffusion Barriers for Cu Interconnects
Additional AES measurements between the Cu islands exclude strong Cu diffusion into the TaN barrier. 8 Intensity [arb. 2 (4) (1) (2) (3) (4) (5) as-dep. 8 Cu Intensity [arb. 6 (1) (2) (3) (4) (5) as-dep. 8 Sputter time [s] Figure 11. GDOES depth profiles of the Ta distribution (a) and of the Cu distribution (b) for the Cu/TaN/SiO2/Si sample in the as-deposited state and after annealing at several temperatures T for t = 1 h. Figure 12. SEM surface image of the Cu/TaN/SiO2/Si sample after annealing at T = 900 °C for t = 1 h.
TaN layers are characterized by a compressive residual stress. 5°, the presence of a <111> texture component is concluded. 5 10 α-Ta TaN Intensity [arb. units] 4 10 Barrier: 3 10 Ta/TaN/Ta 2 10 TaN/Ta 1 10 TaN 0 10 Ta β-Ta Cu -1 10 20 30 40 50 60 70 80 90 100 110 Diffraction angle 2θ [°] Figure 3. Glancing angle XRD diagrams of the samples Cu/Ta/SiO2/Si, Cu/TaN/SiO2/Si, Cu/TaN/Ta/SiO2/Si, and Cu/Ta/TaN/Ta/SiO2/Si in the as-deposited state. Microstructure and Functional Properties of As-Deposited… 31 Figure 4.
A comparison of the above conditions for crystalline phase formation with those for uncapped Ta-Si-N layers (cf. 1) indicates that the presence of a Cu film accelerates the crystallization process, in particular for Ta-Si-N barriers with low N content. In the case of the Ta56Si19N25/SiO2/Si sample, for example, Ta2N formation is observed after annealing at T = 1000 °C for t = 1 h, while the same crystalline phase is detected for the Cu/Ta56Si19N25/SiO2/Si sample after heat treatment at T = 600 °C for t = 8 h.
Advanced Ta-Based Diffusion Barriers for Cu Interconnects by Rene Hubner