Download e-book for iPad: A First Lab in Circuits and Electronics by Yannis Tsividis

By Yannis Tsividis

ISBN-10: 0471386952

ISBN-13: 9780471386957

* Experiments are associated with genuine functions. scholars usually are and excited to benefit extra and discover. instance of experiments associated with actual functions will be obvious in scan 2, steps 6, 7, 15, and sixteen; scan five, steps 6 to ten and test 7, steps 12 to 20.* Self-contained historical past to all electronics experiments. scholars should be in a position to persist with with no need taken an electronics path. encompasses a self-contained creation in keeping with circuits purely. For the teacher this gives flexibility as to whilst to run the lab. it will probably run simultaneously with the 1st circuits research course.* overview historical past sections are supplied. this useful textual content function presents an alternate perspective; is helping offer a uniform historical past for college students of other theoretical backgrounds.* A "touch-and-feel" strategy is helping to supply instinct and to make issues "click". instead of taking into account the lab as a suite of dull techniques, scholars get the concept what they're studying is real.* Encourages scholars to discover and to invite "what if" questions. is helping scholars turn into energetic learners.* Introduces scholars to basic layout at a truly early level. is helping scholars see the relevance of what they're studying, and to develop into energetic learners.* is helping scholars develop into tinkerers and to scan on their lonesome. scholars are inspired to turn into inventive, and their brain is opened to new chances. This additionally merits their next expert paintings and/or graduate learn.

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Note that the above simulated results are obtained from ADS Momentum. The simulated Q-factors of the MOM capacitors are relatively higher than the values directly simulated based on the PDK RF models. It is partially due to the PDK 48 3 mm-Wave Active and Passive Devices Fig. 18 Metal-oxide-metal capacitor (MOM) implemented in top thick metals (finger width D 0:36 m). (a) metal-9,10 (90 m2 ); (b) metal-8,9,10 (60 m2 ) Fig. 19 Simulated capacitance and Q-factor of the MOM capacitors implemented in top thick metals.

2) To provide a low load resistance to the PA output stage and thus increase the output power, a matching network with large impedance transformation ratio has to be used. Such matching network usually suffers from high loss in bulk CMOS technology. (3) Transistors with large size have to be employed in the PA while the associate long interconnects in the layout further degrade the performance. The third issue will be elaborated in Sect. 2. 2 The Class D PA needs at least two transistors and cannot be presented by the Fig.

The T-line can be characterized based on the simulated S-parameters [14]. To simplify the calculation, the S-parameter matrix is converted to ABCD parameters. The characteristic impedance and propagation constant of T-line can be calculated from the equivalent ABCD matrix that is given by Ä ŒABCDT-line D cosh. l/ Zo sinh. l/ sinh. l/=Zo cosh. 11) where Zo is the characteristic line impedance, l the length of the T-line, and the propagation constant. 686 dB. 5 T−line 2 5 T−line 3 0 0 20 40 60 0 80 100 120 140 160 0 Frequency [GHz] 20 40 60 80 100 120 140 160 Frequency [GHz] Fig.

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A First Lab in Circuits and Electronics by Yannis Tsividis


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